BS EN 62418:2010
$102.76
Semiconductor devices. Metallization stress void test
| Published By | Publication Date | Number of Pages |
| BSI | 2010 | 20 |
IEC 62418:2010 describes a method of metallization stress void test and associated criteria. It is applicable to aluminium (Al) or copper (Cu) metallization.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 5 | English CONTENTS |
| 6 | 1 Scope 2 Test equipment 3 Test structure 3.1 Test structure patterns 3.2 Line pattern 3.3 Via chain pattern |
| 7 | 4 Stress temperature 5 Procedure 5.1 Stress void evaluation methods 5.2 Resistance measurement method |
| 8 | 5.3 Inspection method Table 1 – Void classification |
| 9 | 6 Failure criteria 6.1 Resistance method 6.2 Inspection method 7 Data interpretation and lifetime extrapolation (resistance change method) |
| 10 | 8 Items to be specified and reported 8.1 Resistance change method |
| 11 | 8.2 Inspection method |
| 12 | Annex A (informative) Stress migration mechanism Figure A.1 – Schematic representation of the stress-void formation mechanism in Al |
| 14 | Annex B (informative) Technology-dependent factors for aluminium |
| 15 | Annex C (informative) Technology-dependent factors for copper |
| 16 | Annex D (informative) Precautions |
| 18 | Bibliography |
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