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BS EN 62979:2017

BS EN 62979:2017

$102.76

Photovoltaic modules. Bypass diode. Thermal runaway test (IEC 2979:2017)

Published By Publication Date Number of Pages
BSI 2017 20
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This document provides a method for evaluating whether a bypass diode as mounted in the module is susceptible to thermal runaway or if there is sufficient cooling for it to survive the transition from forward bias operation to reverse bias operation without overheating.

This test methodology is particularly suited for testing of Schottky barrier diodes, which have the characteristic of increasing leakage current as a function of reverse bias voltage at high temperature, making them more susceptible to thermal runaway.

The test specimens which employ P/N diodes as bypass diodes are exempted from the thermal runaway test required herein, because the capability of P/N diodes to withstand the reverse bias is sufficiently high.

PDF Catalog

PDF Pages PDF Title
2 undefined
7 CONTENTS
8 FOREWORD
10 INTRODUCTION
11 1 Scope
2 Normative references
3 Terms and definitions
12 4 Thermal runaway test
4.1 Diode thermal runaway
Figure 1 – Illustration of how thermal runaway occurs
13 4.2 Test conditions
4.3 Preparation of test specimen
14 4.4 Test equipment
Figure 2 – Circuit for measurement of Tlead and forward voltage
15 4.5 Test procedure
Figure 3 – Circuit for flowing a forward current to the bypass diode
Figure 4 – Circuit for applying a reverse bias voltage to the bypass diode
16 Figure 5 – The typical pattern of thermal runaway
Figure 6 – The pattern of non-thermal runaway
17 5 Pass or fail criteria
6 Test report

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BS EN 62979:2017
$102.76