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BS IEC 60747-14-11:2021

BS IEC 60747-14-11:2021

$142.49

Semiconductor devices – Semiconductor sensors. Test method of surface acoustic wave-based integrated sensors for measuring ultraviolet, illumination and temperature

Published By Publication Date Number of Pages
BSI 2021 24
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This part of IEC 60747 defines the terms, definitions, configuration, and test methods can be used to evaluate and determine the performance characteristics of surface acoustic wavebased semiconductor sensors integrated with ultraviolet, illuminance, and temperature sensors. The measurement methods are for DC characteristics and RF characteristics, and the measurement method for RF characteristics includes a direct mode and differential amplifier mode based on feedback oscillation. This document excludes devices dealt with by TC 49: piezoelectric, dielectric and electrostatic devices and associated materials for frequency control, selection and detection.

PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
6 FOREWORD
8 1 Scope
2 Normative references
3 Terms and definitions
3.1 General terms
9 3.2 SAW-based integrated light sensors
3.3 Characteristics parameters
Figures
Figure 1 – Configuration of an interdigital transducer (IDT)
10 4 Device structure and characteristics
4.1 General
4.2 Device structure
4.2.1 SAW based resonator type light-sensor elements
11 4.2.2 SAW-based delay line type light sensor elements
4.3 Characteristics of integrated UV and visible-light sensors
Figure 2 – Conceptual diagram for SAW-based resonator type light-sensor elements
Figure 3 – Conceptual diagram for SAW-based delay line type light sensor elements
12 4.4 Key points of integrated UV and visible-light sensors
4.4.1 UV sensitive layer
4.4.2 Visible-light sensitive layer
5 Test conditions
5.1 Test environmental conditions
Figure 4 – Conceptual diagram for integrated multi UV and visible-light sensors
13 5.2 Darkroom condition
5.3 Setup conditions
5.3.1 Starting conditions of test
5.3.2 Conditions of UV and visible light measurement equipment
6 Test methods
6.1 General
14 6.2 Test methods of DC-characteristics for the light sensor element
Figure 5 – Measurement procedure for the semiconductor light sensor
15 Figure 6 – Test setup to measure the I-V characteristics of semiconductor light sensor
Figure 7 – Example of I-V characteristics of a UV sensor element as a function of UV intensity
16 6.3 Test methods of RF characteristics for integrated light sensors
6.3.1 Direct mode
6.3.2 Differential amplifier mode
Figure 8 – Test setup to measure the frequency shift of semiconductor light sensor
18 Figure 9 – Differential amplifier mode method
19 Figure 10 – Measurement results of UV and visible-light sensors using differential amplifier mode
20 Annex A (informative)Ultraviolet and visible light characteristics of the sensitive layer
Figure A.1 – Operation principle of the ZnO sensitive layer for UV sensing
21 Figure A.2 – Operation principle in terms of band theory
22 Annex B (informative)Hysteresis of frequency shift according to the on/off state light condition
Figure B.1 – Hysteresis of the frequency shift under optimal light conditions
23 Bibliography

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BS IEC 60747-14-11:2021
$142.49