BS IEC 62047-33:2019
$142.49
Semiconductor devices. Micro-electromechanical devices – MEMS piezoresistive pressure-sensitive device
| Published By | Publication Date | Number of Pages |
| BSI | 2019 | 28 |
This part of IEC 62047 defines terms, definitions, essential ratings and characteristics, as well as test methods applicable to MEMS piezoresistive pressure-sensitive device. This document applies to piezoresistive pressure-sensitive devices for automotive, medical treatment, electronic products.
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | undefined |
| 4 | CONTENTS |
| 6 | FOREWORD |
| 8 | 1 Scope 2 Normative references |
| 9 | 3 Terms and definitions Figures Figure 1 – Structure schematic diagram of the device |
| 10 | 4 Essential ratings and characteristics 4.1 Ratings (Limiting values) 4.2 Recommended operating conditions 4.3 Characteristics Table 1 – Characteristics of the device |
| 11 | 5 Test methods 5.1 Input resistance 5.2 Output resistance 5.3 Leakage current 5.3.1 P-N junction isolation type sensitive device |
| 12 | 5.3.2 Insulating medium type sensitive device 5.4 Breakdown voltage 5.5 Isolation voltage 5.6 Static performances 5.6.1 Test method Figure 2 – Test connection graph for P-N junction isolation type sensitive device Figure 3 – Test connection graph for insulating medium type sensitive device |
| 13 | Figure 4 – Test system |
| 14 | 5.6.2 Output under normal pressure 5.6.3 Zero output |
| 15 | 5.6.4 Output symmetry 5.6.5 Full-span output 5.6.6 Nonlinearity 5.6.7 Pressure hysteresis |
| 16 | 5.6.8 Repeatability |
| 17 | 5.6.9 Accuracy 5.6.10 Sensitivity 5.6.11 Zero drift |
| 18 | 5.7 Stability 5.7.1 Test method 5.7.2 Zero long-term stability 5.7.3 Sensitivity long-term stability 5.8 Temperature influence 5.8.1 Test method |
| 19 | 5.8.2 Thermal zero drift 5.8.3 Thermal sensitivity drift 5.8.4 Thermal zero output hysteresis 5.8.5 Thermal sensitivity hysteresis |
| 20 | 5.8.6 Temperature hysteresis 5.9 Static pressure influence 5.9.1 Two way static pressure |
| 21 | 5.9.2 Unidirectional static pressure 5.10 Overload 5.11 Dynamic performance 5.11.1 Test method |
| 22 | 5.11.2 Frequency response 5.11.3 Ringing frequency 5.11.4 Damping ratio Figure 5 – The output wave |
| 23 | 5.11.5 Rise time 5.11.6 Resonant frequency 5.11.7 Overshoot 5.12 Environment test 5.12.1 Storage at high temperature 5.12.2 Storage at low temperature |
| 24 | 5.12.3 Temperature cycling 5.12.4 Vibration 5.12.5 Mechanical shock 5.12.6 Acceleration 5.12.7 Moisture resistance 5.12.8 Mucedine 5.12.9 Salt atmosphere |
| 25 | 5.12.10 Electromagnetic compatibility 5.12.11 Low pressure 5.12.12 High temperature electric life 5.12.13 Fatigue life |
| 26 | Bibliography |
