BSI 20/30406230 DC 2020
$13.70
BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1. Test method for bias temperature instability
Published By | Publication Date | Number of Pages |
BSI | 2020 | 11 |
Status | Definitive |
---|---|
Pages | 11 |
Publication Date | 2020-04-01 |
Standard Number | 20/30406230 DC |
Title | BS IEC 63275-1. Semiconductor devices. Reliability test method for silicon carbide discrete metal-oxide semiconductor field effect transistors – Part 1. Test method for bias temperature instability |
Identical National Standard Of | 47/2622/CD, prEN IEC 63275-1:2021 |
Descriptors | Semiconductor technology, Semiconductor devices, Semiconductors, Diode transistor logic circuits, Transistor transistor logic circuits |
Publisher | BSI |
Committee | EPL/47 |
ICS Codes | 31.080 - Semiconductor devices |