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BSI PD IEC TS 62607-2-4:2020

$102.76

Nanomanufacturing. Key control characteristics – Carbon nanotube materials. Test methods for determination of resistance of individual carbon nanotubes

Published By Publication Date Number of Pages
BSI 2020 22
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This part of IEC 62607 specifies the test method for determining the resistivity and the contact resistance of an individual CNT and the dependability of the measurement.

This document includes:

  • outlines of the experimental procedures used to measure resistance of carbon nanotubes,

  • methods of interpretation of results and discussion of data analysis, and

  • case studies.

PDF Catalog

PDF Pages PDF Title
2 undefined
4 CONTENTS
5 FOREWORD
7 INTRODUCTION
8 1 Scope
2 Normative references
3 Terms, definitions, and abbreviated terms
3.1 Terms and definitions
10 3.2 Abbreviated terms
4 Measurement of resistance
4.1 General
4.2 Method for processing and fabrication of DUT
4.3 4-probe measurement
11 5 Reporting data
Figures
Figure 1 – 4-probe measurement in a SEM chamber
12 6 Data analysis / interpretation of results (Annex A)
6.1 General
6.2 Measurement error
Figure 2 – A crooked/curved CNT under measurement
13 6.3 Need to prepare the proper electric probing circuit
6.4 Need to prepare the proper substrate and electric contact
6.5 Dynamic range
6.6 Current density
6.7 Voltage bias of the substrate
6.8 Measurement in vacuum
Figure 3 – I-V measurement of a sufficiently straight CNT
14 Annex A (informative)Case study
A.1 4-probe measurement of MWCNT
A.1.1 I-V measurements of MWCNT
Figure A.1 – I-V measurements of a CNT with different lengths, L
15 Figure A.2 – I-V relationships for different CNT lengths – 2-probe measurement
Figure A.3 – I-V relationships for different CNT lengths –2-probe measurement (0 to 0,5 V)
16 A.1.2 Fabrication process information of MWCNT and DUT
Figure A.4 – I-V relationships for different CNT lengths – 4-probe measurement
Figure A.5 – Resistance vs. CNT length
17 A.2 4-probe measurement of SWCNT
A.2.1 I-V measurements of SWCNT
Figure A.6 – I-V relationships of SWCNT
18 Figure A.7 – Resistance vs. SWCNT length
19 Figure A.8 – I-V relationships of SWCNT under the electron-beam exposure
20 A.2.2 Fabrication process information of SWCNT and DUT
Figure A.9 – Breakdown characteristics of SWCNT
21 Bibliography
BSI PD IEC TS 62607-2-4:2020
$102.76