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BSI PD IEC/TS 62607-5-1:2014

BSI PD IEC/TS 62607-5-1:2014

$102.76

Nanomanufacturing. Key control characteristics – Thin-film organic/nano electronic devices. Carrier transport measurements

Published By Publication Date Number of Pages
BSI 2014 20
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This part of IEC 62607, which is a Technical Specification, provides a standardized sample structure for characterizing charge transport properties in thin-film organic/nano electronic devices and a format to report details of the structure which shall be provided with the measurement results. The standardized OTFT testing structure with a contact-area-limited doping can mitigate contact resistance and enable reliable measurement of the charge carrier mobility. The purpose of this Technical Specification is to provide test sample structures for determining the intrinsic charge transport properties of organic thin-film devices. The intention is to provide reliable materials information for OTFTs and to set guidelines for making test sample structures so that materials information is clear and consistent throughout the research community and industry.

PDF Catalog

PDF Pages PDF Title
4 CONTENTS
5 FOREWORD
7 INTRODUCTION
8 1 Scope
2 Normative references
3 Terms, definitions and abbreviations
3.1 Terms and definitions
9 3.2 Symbols and abbreviated terms
10 4 Sample structures of OTFTs
4.1 Typical device structures of OTFTs
4.2 Contact-area-limited doping in OTFTs
Figures
Figure 1 – Typical device structures of OTFTs
11 5 Appropriate data format
Figure 2 – Contact-area-limited doping in OTFTs
Figure 3 – Summary of this Technical Specification
12 Tables
Table 1 – Possible data format to be given together with carrier transport properties of OTFTs
13 Annex A (informative) Experimental studies on contact-area-limited doping in OTFTs
A.1 Contact-area-limited doping in bottom-gate, top-contact OTFTs
14 Figure A.1 – Sample preparation of bottom-gate, top-contact (BGTC) pentacene OTFTs using contact-area-limited doping
Figure A.2 – Contact-area-limited doping effect in bottom-gate, top-contact (BGTC) pentacene OTFTs
15 A.2 Contact-area-limited doping in bottom-gate, bottom-contact OTFTs
Figure A.3 – Sample preparation of bottom-gate, bottom-contact (BGBC) p-channel OTFTs using contact-area-limited doping
16 Figure A.4 – Contact-area-limited doping effect in bottom-gate, bottom-contact (BGBC) pentacene OTFTs
Figure A.5 – Contact-area-limited doping effect in bottom-gate, bottom-contact (BGBC) oligothiophene OTFTs
17 Bibliography

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BSI PD IEC/TS 62607-5-1:2014
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