IEC 60747-9:2019
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Semiconductor devices – Part 9: Discrete devices – Insulated-gate bipolar transistors (IGBTs)
Published By | Publication Date | Number of Pages |
IEC | 2019-11-13 | 164 |
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IEC 60747-9:2019 specifies product specific standards for terminology, letter symbols, essential ratings and characteristics, verification of ratings and methods of measurement for insulated-gate bipolar transistors (IGBTs).
This third edition includes the following significant technical changes with respect to the previous edition:
- reverse-blocking IGBT and its related technical contents have been added;
- reverse-conducting IGBT and its related technical contents have been added;
- some parts of the previous edition have been amended, combined or deleted.
Published Code | IEC |
---|---|
Published By | International Electrotechnical Commission |
Publication Date | 2019-11-13 |
Pages Count | 164 |
Language | France |
Edition | 3.0 |
File Size | 4.7 MB |
ICS Codes | 31.080.01 - Semiconductor devices in general 31.080.30 - Transistors |
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