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IEC 63284:2022

$22.10

Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors

Published By Publication Date Number of Pages
IEC 2022-04-21 30
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IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress

IEC 63284:2022
$22.10