IEC 63284:2022
$22.10
Semiconductor devices – Reliability test method by inductive load switching for gallium nitride transistors
Published By | Publication Date | Number of Pages |
IEC | 2022-04-21 | 30 |
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IEC 63284:2022 covers the protocol of performing a stress procedure and a corresponding test method to evaluate the reliability of gallium nitride (GaN) power transistors by inductive load switching, specifically hard-switching stress
Published Code | IEC |
---|---|
Published By | International Electrotechnical Commission |
Publication Date | 2022-04-21 |
Pages Count | 30 |
Language | France |
Edition | 1.0 |
File Size | 962.6 KB |
ICS Codes | 31.080.30 - Transistors |
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