{"id":233154,"date":"2024-10-19T15:11:40","date_gmt":"2024-10-19T15:11:40","guid":{"rendered":"https:\/\/pdfstandards.shop\/product\/uncategorized\/bs-en-624162010\/"},"modified":"2024-10-25T09:40:03","modified_gmt":"2024-10-25T09:40:03","slug":"bs-en-624162010","status":"publish","type":"product","link":"https:\/\/pdfstandards.shop\/product\/publishers\/bsi\/bs-en-624162010\/","title":{"rendered":"BS EN 62416:2010"},"content":{"rendered":"
This standard describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.<\/p>\n
PDF Pages<\/th>\n | PDF Title<\/th>\n<\/tr>\n | ||||||
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5<\/td>\n | English CONTENTS <\/td>\n<\/tr>\n | ||||||
6<\/td>\n | 1 Scope 2 Abbreviations and letter symbols <\/td>\n<\/tr>\n | ||||||
7<\/td>\n | 3 Test structures 4 Stress time 5 Stress conditions <\/td>\n<\/tr>\n | ||||||
8<\/td>\n | 6 Sample size 7 Temperature 8 Failure criteria 9 Lifetime estimation method 9.1 DC acceleration models <\/td>\n<\/tr>\n | ||||||
10<\/td>\n | 9.2 AC estimation model 10 Lifetime requirements 11 Reporting <\/td>\n<\/tr>\n | ||||||
11<\/td>\n | Bibliography <\/td>\n<\/tr>\n<\/table>\n","protected":false},"excerpt":{"rendered":" Semiconductor devices. Hot carrier test on MOS transistors<\/b><\/p>\n |