BS EN 62416:2010

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Semiconductor devices. Hot carrier test on MOS transistors

Published By	Publication Date	Number of Pages
BSI	2010	14

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Categories: 31.080.30 - Transistors, BSI

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Description

This standard describes the wafer level hot carrier test on NMOS and PMOS transistors. The test is intended to determine whether the single transistors in a certain (C)MOS process meet the required hot carrier lifetime.

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PDF Pages	PDF Title
5	English CONTENTS
6	1 Scope 2 Abbreviations and letter symbols
7	3 Test structures 4 Stress time 5 Stress conditions
8	6 Sample size 7 Temperature 8 Failure criteria 9 Lifetime estimation method 9.1 DC acceleration models
10	9.2 AC estimation model 10 Lifetime requirements 11 Reporting
11	Bibliography

Additional information

Status	Definitive
Pages	14
Publication Date	2010-07-31
ISBN	978 0 580 58621 7
Standard Number	BS EN 62416:2010
Title	Semiconductor devices. Hot carrier test on MOS transistors
Identical National Standard Of	EN 62416:2010, IEC 62416:2010
Descriptors	Semiconductor devices, Metal oxide semiconductors, Endurance testing, Electrical testing, Stress, Semiconductors, Transistors, Life (durability)
Publisher	BSI
Committee	EPL/47
ICS Codes	31.080.30 - Transistors

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BS EN 62416:2010

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