BS EN IEC 60749-17:2019
$86.31
Semiconductor devices. Mechanical and climatic test methods – Neutron irradiation
| Published By | Publication Date | Number of Pages |
| BSI | 2019 | 14 |
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to non-ionizing energy loss (NIEL) degradation. The test described herein is applicable to integrated circuits and discrete semiconductor devices and is intended for military- and aerospace-related applications. It is a destructive test.
The objectives of the test are as follows:
-
to detect and measure the degradation of critical semiconductor device parameters as a function of neutron fluence, and
-
to determine if specified semiconductor device parameters are within specified limits after exposure to a specified level of neutron fluence (see Clause 6).
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | undefined |
| 5 | English CONTENTS |
| 6 | FOREWORD |
| 8 | 1 Scope 2 Normative references 3 Terms and definitions 4 Test apparatus 4.1 Test instruments 4.2 Radiation source |
| 9 | 4.3 Dosimetry equipment 4.4 Dosimetry measurements 4.4.1 Neutron fluences 4.4.2 Dose measurements 5 Procedure 5.1 Safety requirements 5.2 Test samples |
| 10 | 5.3 Pre-exposure 5.3.1 Electrical tests 5.3.2 Exposure set-up 5.4 Exposure 5.5 Post-exposure 5.5.1 Electrical tests 5.5.2 Anomaly investigation 5.6 Reporting |
| 11 | 6 Summary |
| 12 | Bibliography |
Related products
-
BS EN IEC 60749-17:2019 – TC:2020 Edition
Tracked Changes. Semiconductor devices. Mechanical and climatic test methods – Neutron irradiation Published By Publication…
