BS IEC 60747-4:2007+A1:2017:2018 Edition
$256.21
Semiconductor devices. Discrete devices – Microwave diodes and transistors
| Published By | Publication Date | Number of Pages |
| BSI | 2018 | 140 |
This part of IEC 60747 gives requirements for the following categories of discrete devices:
-
variable capacitance diodes and snap-off diodes (for tuning, up-converter or harmonic multiplication, switching, limiting, phased shift, parametric amplification);
-
mixer diodes and detector diodes;
-
avalanche diodes (for direct harmonic generation, amplification);
-
gunn diodes (for direct harmonic generation);
-
bipolar transistors (for amplification, oscillation);
-
field-effect transistors (for amplification, oscillation).
PDF Catalog
| PDF Pages | PDF Title |
|---|---|
| 2 | National foreword |
| 6 | FOREWORD |
| 8 | 1 Scope 2 Normative references 3 Variable capacitance, snap-off diodes and fast-switching schottky diodes 3.1 Variable capacitance diodes 3.1.1 General |
| 9 | 3.1.2 Terminology and letter symbols 3.1.3 Essential ratings and characteristics |
| 11 | 3.1.4 Measuring methods |
| 37 | 3.2 Snap-off diodes, Schottky diodes 3.2.1 General 3.2.2 Terminology and letter symbols |
| 38 | 3.2.3 Essential ratings and characteristics |
| 40 | 3.2.4 Measuring methods |
| 47 | 4 Mixer diodes and detector diodes 4.1 Mixer diodes used in radar applications 4.1.1 General 4.1.2 Terminology and letter symbols |
| 48 | 4.1.3 Essential ratings and characteristics |
| 50 | 4.1.4 Measuring methods |
| 68 | 4.2 Mixer diodes used in communication applications 4.2.1 General 4.2.2 Terminology and letter symbols 4.2.3 Essential ratings and characteristics |
| 70 | 4.2.4 Measuring methods 4.3 Detector diodes 5 Impatt diodes 5.1 Impatt diodes amplifiers 5.1.1 General 5.1.2 Terms and definitions |
| 73 | 5.1.3 Essential ratings and characteristics |
| 76 | 5.2 Impatt diodes oscillators |
| 77 | 6 Gunn diodes 6.1 General 6.2 Terms and definitions 6.3 Essential ratings and characteristics 6.4 Measuring methods 6.4.1 Pulse breakdown voltage V(BR) |
| 78 | 6.4.2 Threshold voltage |
| 79 | 6.4.3 Resistance |
| 80 | 7 Bipolar transistors 7.1 General 7.2 Terms and definitions |
| 83 | 7.3 Essential ratings and characteristics 7.3.1 General 7.3.2 Limiting values (absolute maximum rating system) |
| 86 | 7.4 Measuring methods 7.4.1 General |
| 87 | 7.4.2 DC characteristics 7.4.3 RF characteristics |
| 100 | 7.5 Verifying methods 7.5.1 Load mismatch tolerance (ΨL) |
| 103 | 7.5.2 Source mismatch tolerance (ΨS) |
| 106 | 7.5.3 Load mismatch ruggedness (ΨR) |
| 108 | 8 Field-effect transistors 8.1 General 8.2 Terms and definitions |
| 111 | 8.3 Essential ratings and characteristics 8.3.1 General 8.3.2 Limiting values (absolute maximum rating system) |
| 112 | 8.4 Measuring methods 8.4.1 General |
| 113 | 8.4.2 DC characteristics |
| 119 | 8.4.3 RF characteristics |
| 129 | 8.5 Verifying methods 8.5.1 Load mismatch tolerance (ΨL) 8.5.2 Source mismatch tolerance (ΨS) 8.5.3 Load mismatch ruggedness (ΨR) |
| 130 | 9 Assessment and reliability – specific requirements 9.1 Electrical test conditions 9.2 Failure criteria and failure-defining characteristics for acceptance tests 9.3 Failure criteria and failure-defining characteristics for reliability tests 9.4 Procedure in case of a testing error |
